Silicon nanowires fabricated by metal-assisted chemical etching can\udpresent low porosity and a rough surface depending on the doping level\udof the original silicon wafer. In this case, wiring of silicon nanowires\udmay represent a challenging task. We investigated two different\udapproaches to realize the electrical contacts in order to enable\udelectrical measurement on a rough silicon nanowire device: we compared\udFIB-assisted platinum deposition for the fabrication of electrical\udcontact with EBL technique.
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